? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 102 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-264 10 g sot-227b 30 g g = gate d = drain s = source tab = drain ds99221a(02/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 33 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet ixfk 102n30p ixfn 102n30p advanced technical information n-channel enhancement mode fast intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density v dss = 300 v i d25 = 102 a r ds(on) =33m ? ? ? ? ? to-264(sp) (ixfk) (tab) g d s t rr 200 ns g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal.
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 102n30p ixfn 102n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 45 57 s c iss 7500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1150 pf c rss 230 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 28 ns t d(off) r g = 3.3 ? (external) 130 ns t f 30 ns q g(on) 224 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 50 nc q gd 110 nc r thjc 0.18 k/w r thck to-264 0.15 k/w r thck sot-227b 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 102 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 200 ns -di/dt = 100 a/ s q rm v r = 100 v 0.8 c ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 sot-227b outline to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2005 ixys all rights reserved ixfk 102n30p ixfn 102n30p fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 110 0123456789 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds( on) - normalize d i d = 102a i d = 51a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r ds(on) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 102n30p ixfn 102n30p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 q g - nanocoulombs v g s - volts v ds = 150v i d = 51a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v gs - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 200 i d - amperes g fs - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 12. for w ar d -bias safe operating area 1 10 100 1000 10 100 1000 v ds - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved ixfk 102n30p ixfn 102n30p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th)jc - oc/w
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